PART |
Description |
Maker |
WMS512K8L-25FQA WMS512K8-25FQA WMS512K8L-45DEC WMS |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
White Electronic Designs Co... White Electronic Design...
|
WMS512K8BV-15DEIE WMS512K8BV-15DJCE WMS512K8BV-15F |
512K X 8 STANDARD SRAM, 20 ns, CDSO32 512Kx8 MONOLITHIC SRAM
|
WHITE ELECTRONIC DESIGNS CORP http:// White Electronic Design...
|
WMS512K8LV-100CME WMS512K8LV-85CME WMS512K8LV-85CM |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
WPS512K8X WPS512K8 WPS512K8B-XXXRJI WPS512K8B-XXXR |
DIODE ZENER SINGLE 200mW 3Vz 5mA-Izt 0.0667 10uA-Ir 1 SOT-323 3K/REEL 512Kx8 SRAM 512Kx8SRAM 512Kx8 SRAM 512Kx8的SRAM 115-230V CURR RELAY 512Kx8的SRAM
|
White Microelectronics List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM BOX 4.38X3.25X0.91BLACK BULK STD BLK BOX (3.25X4.38X0.9) STD-I BLK BOX (3.25X4.38X0.9) BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器 BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器 BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器 BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器 BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器 STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器 BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器 512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器 END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器 DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height, SENSOR HI-IMP 30PSIA DIP PKG 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 35ns; 512K x 8 monilithic SRAM, SMD 5962-95613 15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers List of Unclassifed Man... White Electronic Designs
|
EDI88130LPSXCI EDI88130CSXFB EDI88130CSXCC EDI8813 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
|
KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM RESISTOR 13K 1/16W 1 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power Slow SRAM - 256K x8|3.3V|70/85/100|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
|